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| PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = 200 74 34 200 V A m ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Maximum Ratings 200 200 20 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns TO-247 (IXFH) G D S D (TAB) PLUS220 (IXFV) G W C C C C C D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting Force Mounting torque TO-247 PLUS220 (PLUS220) (TO-247) 300 250 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 6.0 4.0 g g G S G = Gate S = Source D = Drain TAB = Drain D (TAB) Features Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 200 2.5 5.0 100 25 250 34 V V nA A A m Advantages Easy to mount Space savings High power density DS99209(09/04) International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved IXFH 74N20P IXFV 74N20P IXFV 74N20PS Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 44 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 190 23 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 21 60 21 107 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 52 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W (TO-247, PLUS220) 0.21 K/W Terminals: 1 - Gate 2 - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM PLUS220SMD (IXFV-PS) Outline E E1 L2 A A1 E1 Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 74 180 1.5 120 0.4 6 A A V Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V PLUS220 (IXFV) Outline E E1 L2 A A1 E1 200 ns C A L1 L D L3 D1 2X e 3X b c A2 Terminals: 1-Gate 2-Drain D A3 L3 L L1 2X b e c A2 L4 Terminals: 1-Gate 2-Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 A A1 A2 b c D D1 E E1 e L L1 L2 L3 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig. 1. Output Characteristics @ 25C 80 70 60 VGS = 10V 9V 8V 200 180 160 140 8V 7V VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 50 40 30 20 10 0 0 0.5 1 1.5 I D - Amperes 7V 120 100 80 60 40 6V 6V 5V 5V 20 0 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18 20 V D S - Volts Fig. 3. Output Characteristics @ 150C 80 70 60 VGS = 10V 9V 8V 7V 3 VGS = 10V 2.6 V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized I D - Amperes 50 40 30 20 10 0 0 1 2 3 4 2.2 1.8 1.4 1 0.6 I D = 74A I D = 37A 6V 5V 5 6 7 -50 -25 0 25 50 75 100 125 150 175 V D S - Volts Fig. 5. RDS(on) Norm alized to 5 4.5 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID VGS = 10V TJ = 175C 80 70 60 R D S ( o n ) - Normalized 4 3.5 3 2.5 2 1.5 1 0.5 0 20 40 60 VGS = 15V I D - Amperes 50 40 30 20 VGS = 10V TJ = 25C 80 100 120 140 160 180 200 10 0 I D - Amperes -50 -25 0 TC - Degrees Centigrade 25 50 75 100 125 150 175 (c) 2004 IXYS All rights reserved IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig. 7. Input Adm ittance 100 90 80 50 TJ = -40C 25C 150C 60 Fig. 8. Transconductance 60 50 40 30 20 10 0 3.5 4 4.5 5 5.5 6 6.5 7 TJ = 150C 25C -40C g f s - Siemens 70 I D - Amperes 40 30 20 10 0 0 20 40 60 80 100 120 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 180 160 I D - Amperes Fig. 10. Gate Charge 10 9 8 7 VDS = 100V I D = 37A I G = 10mA I S - Amperes 140 VG S - Volts TJ = 150C TJ = 25C 120 100 80 60 40 20 0 0.4 0.6 0.8 6 5 4 3 2 1 0 V S D - Volts 1 1.2 1.4 0 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 C iss TJ = 175C R DS(on) Limit TC = 25C 25s 100s 1ms 10 C rss 10ms DC Fig. 11. Capacitance 10000 f = 1MHz Capacitance - picoFarads I D - Amperes 35 40 100 1000 C oss 100 0 5 10 15 1 V D S - Volts 20 25 30 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce 1.00 R( t h ) J C - C / W 0.10 0.01 1 10 100 1000 Puls e W idth - millis ec onds (c) 2004 IXYS All rights reserved |
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